Search Results for &quot; IXBN75N170 &quot;

IGBT MOD 1700V 145A 625W SOT227B

Volume Production

Package/Case: SOT-227-4

Collector Emitter Breakdown Voltage: 1.7kV

Collector Emitter Voltage (VCEO): 1.7kV

Collector-emitter Voltage-Max: 3.1V

Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Collector Emitter Breakdown Voltage: 1.7kV

Collector Emitter Saturation Voltage: 4.95V

Collector Emitter Voltage (VCEO): 1.7kV

Littelfuse

Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4

FLANGE MOUNT, R-PUFM-X4

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Search Results for "IXBN75N170"

Filters

IXBN75N170

IGBT MOD 1700V 145A 625W SOT227B

Volume Production

Package/Case: SOT-227-4

Collector Emitter Breakdown Voltage: 1.7kV

Collector Emitter Voltage (VCEO): 1.7kV

Collector-emitter Voltage-Max: 3.1V

Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Collector Emitter Breakdown Voltage: 1.7kV

Collector Emitter Saturation Voltage: 4.95V

Collector Emitter Voltage (VCEO): 1.7kV

Littelfuse

Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4