Power Field-Effect Transistor, 210A I(D), 200V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS264, 3 PIN
200V 188A N-Channel MOSFET, 10.5mR Rds On, 1.07kW PD
Power Field-Effect Transistor, 210A I(D), 300V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
N-Ch MOSFET, 200V, 188A, 0.0105 Ohm, 4-Pin
Power Field-Effect Transistor,
