
N-Channel Power MOSFET, 200V Vdss, 188A continuous drain current (ID), and 10.5mR Rds On Max. This silicon Metal-oxide Semiconductor FET features a maximum power dissipation of 1.07kW and a low drain-source on-resistance. Designed for chassis mounting in a SOT-227-4 package, it operates within a temperature range of -55°C to 175°C. RoHS compliant and lead-free.
Sign in to ask questions about the Ixys IXFN210N20P datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXFN210N20P technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 188A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 10.5MR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 18.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.07kW |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.07kW |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFN210N20P to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
