N-Channel Power MOSFET, 200V Vdss, 188A continuous drain current (ID), and 10.5mR Rds On Max. This silicon Metal-oxide Semiconductor FET features a maximum power dissipation of 1.07kW and a low drain-source on-resistance. Designed for chassis mounting in a SOT-227-4 package, it operates within a temperature range of -55°C to 175°C. RoHS compliant and lead-free.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power1.07kW
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Technical Specifications
Ixys IXFN210N20P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 188A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 10.5MR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 18.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.07kW |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.07kW |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN210N20P Datasheet
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