Search Results for &quot; IXFB50N80Q2 &quot;

800V 50A N-Channel MOSFET, 150mR Rds(on)

PLUS264, 3 PIN

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 50A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 150mR

Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264, 3 PIN

PLUS264, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 50A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 150mR

Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

MINIBLOC-4

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Search Results for "IXFB50N80Q2"

Filters

800V 50A N-Channel MOSFET, 150mR Rds(on)

PLUS264, 3 PIN

Transferred

Package/Case: TO-264-3

Continuous Drain Current (ID): 50A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 150mR

Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264, 3 PIN

PLUS264, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 50A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 150mR

Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4