Quick Jump:
Technical Specifications
Ixys IXFN50N80Q2 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 13.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.135kW |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN50N80Q2 Datasheet
Download the complete datasheet for Ixys IXFN50N80Q2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
