Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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Ixys IXFN50N80Q2 technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 13.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.135kW |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| RoHS | Compliant |
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