N-channel silicon power MOSFET featuring 800V drain-source breakdown voltage and 50A continuous drain current. This metal-oxide semiconductor FET offers a low 0.15 ohm drain-source resistance and a maximum power dissipation of 1.135kW. Designed for through-hole mounting in a TO-264 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 26ns turn-on delay and a 13ns fall time.
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Ixys IXFB50N80Q2 technical specifications.
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.59mm |
| Input Capacitance | 7.2nF |
| Lead Free | Lead Free |
| Length | 20.29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.135kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 890W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 26ns |
| Width | 5.31mm |
| RoHS | Compliant |
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