Search Results for &quot; IXFN27N80 &quot;

800V 27A N-Channel MOSFET, 300mR Rds On, 520W PD

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 27A

Current Rating: 27A

Drain to Source Breakdown Voltage: 800V

Power Field-Effect Transistor, 27A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

MINIBLOC-4

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

800V 27A N-CH MOSFET, 320mR RdsOn, 520W PD, SOT-227

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 320mR

Power Field-Effect Transistor, 27A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

MINIBLOC-4

Not Recommended

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Search Results for "IXFN27N80"

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800V 27A N-Channel MOSFET, 300mR Rds On, 520W PD

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 27A

Current Rating: 27A

Drain to Source Breakdown Voltage: 800V

Power Field-Effect Transistor, 27A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

MINIBLOC-4

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

800V 27A N-CH MOSFET, 320mR RdsOn, 520W PD, SOT-227

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 320mR

Power Field-Effect Transistor, 27A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4