Search Results for &quot; IXFR12N100 &quot;

HiPerFET 1kV 10A Through Hole Power MOSFET

Unknown

Continuous Drain Current (ID): 10A

Current Rating: 12A

Drain to Source Voltage (Vdss): 1kV

Input Capacitance: 2.9nF

Power Field-Effect Transistor, 10A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 10A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 1.1R

Drain to Source Voltage (Vdss): 1kV

Littelfuse

Power Field-Effect Transistor, 10A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

IXFR12N100F

N-CHANNEL FET 1kV 10A 1.05R 250W Rail/Tube

Obsolete

Continuous Drain Current (ID): 10A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 1.05R

Fall Time: 12ns

Search Results for "IXFR12N100"

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IXFR12N100

HiPerFET 1kV 10A Through Hole Power MOSFET

Unknown

Continuous Drain Current (ID): 10A

Current Rating: 12A

Drain to Source Voltage (Vdss): 1kV

Input Capacitance: 2.9nF

Power Field-Effect Transistor, 10A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 10A

Drain to Source Breakdown Voltage: 1kV

Drain to Source Resistance: 1.1R

Drain to Source Voltage (Vdss): 1kV

Littelfuse

Power Field-Effect Transistor, 10A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

IXFR12N100F

N-CHANNEL FET 1kV 10A 1.05R 250W Rail/Tube