Search Results for &quot; IXFR34N80 &quot;

MOSFET N-CH 800V 28A ISOPLUS247

Not Recommended for New Design

Continuous Drain Current (ID): 28A

Current Rating: 28A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 240mR

800V N-Channel MOSFET, 25A ID, 200mR Rds(on)

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 25A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 200mR

Drain to Source Voltage (Vdss): 800V

Power Field-Effect Transistor, 20A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 20A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 290mR

Drain to Source Voltage (Vdss): 800V

Power Field-Effect Transistor, 24A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN

PLASTIC, ISOPLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 300mR

Power Field-Effect Transistor, 28A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN

PLASTIC, ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 28A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 300mR

Drain to Source Voltage (Vdss): 800V

Power Field-Effect Transistor, 25A I(D), 800V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 20A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor, 28A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN

PLASTIC, ISOPLUS247, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Search Results for "IXFR34N80"

Filters

IXFR34N80

MOSFET N-CH 800V 28A ISOPLUS247

Not Recommended for New Design

Continuous Drain Current (ID): 28A

Current Rating: 28A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 240mR

800V N-Channel MOSFET, 25A ID, 200mR Rds(on)

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 25A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 200mR

Drain to Source Voltage (Vdss): 800V

Power Field-Effect Transistor, 20A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 20A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 290mR

Drain to Source Voltage (Vdss): 800V

Power Field-Effect Transistor, 24A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN

PLASTIC, ISOPLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 300mR

Power Field-Effect Transistor, 28A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN

PLASTIC, ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 28A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 300mR

Drain to Source Voltage (Vdss): 800V

Power Field-Effect Transistor, 25A I(D), 800V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 20A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor, 28A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN