N-Channel Power MOSFET featuring 800V drain-source breakdown voltage and 25A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 200mΩ drain-source resistance. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 300W. Key switching characteristics include a 27ns fall time, 75ns turn-off delay, and 28ns turn-on delay.
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| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 12nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 28ns |
| Width | 5.21mm |
| RoHS | Compliant |
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