Power Field-Effect Transistor, 20A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
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Ixys IXFR32N80P technical specifications.
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 8.8nF |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 30ns |
| Width | 5.21mm |
| RoHS | Compliant |
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