Search Results for "IXFV12N120P"

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Power Field-Effect Transistor, 12A I(D), 1200V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN

PLASTIC, PLUS220, 3 PIN

Obsolete

Package/Case: TO-220-3

Continuous Drain Current (ID): 12A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 1.35R

Power Field-Effect Transistor, 12A I(D), 1200V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN

PLASTIC, PLUS220SMD, 3 PIN

Obsolete

Continuous Drain Current (ID): 12A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 1.35R

Drain to Source Voltage (Vdss): 1.2kV

Power Field-Effect Transistor, 12A I(D), 1200V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN

PLASTIC, PLUS220, 3 PIN

Obsolete

Package/Case: TO-220-3

Continuous Drain Current (ID): 12A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 1.35R

Power Field-Effect Transistor, 12A I(D), 1200V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN

PLASTIC, PLUS220SMD, 3 PIN

Obsolete

Continuous Drain Current (ID): 12A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 1.35R

Drain to Source Voltage (Vdss): 1.2kV