The IXFV12N120P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 543W and a continuous drain current of 12A. The device is packaged in a TO-220-3 package and is available in a rail/tube packaging with 50 units per package. The IXFV12N120P is RoHS compliant and features a drain to source breakdown voltage of 1.2kV and a drain to source resistance of 1.35R.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power543W
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Technical Specifications
Ixys IXFV12N120P technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 1.35R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 34ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 543W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 543W |
| Rds On Max | 1.35R |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 62ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFV12N120P Datasheet
Download the complete datasheet for Ixys IXFV12N120P to view detailed technical specifications.
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