Search Results for &quot; IXGH32N170 &quot;

1700V 75A N-Ch IGBT TO-247AD

PLASTIC PACKAGE-3

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 1.7kV

Collector Emitter Voltage (VCEO): 1.7kV

Collector-emitter Voltage-Max: 3.3V

1700V 75A N-Ch IGBT TO-247AD

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-247AD

IGBT 1.7kV 32A 350W 3-Pin TO-247AD

TO-247AD, 3 PIN

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 1.7kV

Collector Emitter Saturation Voltage: 4V

Collector Emitter Voltage (VCEO): 1.7kV

Insulated Gate Bipolar Transistor, 32A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-247AD

Search Results for "IXGH32N170"

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1700V 75A N-Ch IGBT TO-247AD

PLASTIC PACKAGE-3

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 1.7kV

Collector Emitter Voltage (VCEO): 1.7kV

Collector-emitter Voltage-Max: 3.3V

1700V 75A N-Ch IGBT TO-247AD

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-247AD

IGBT 1.7kV 32A 350W 3-Pin TO-247AD

TO-247AD, 3 PIN

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 1.7kV

Collector Emitter Saturation Voltage: 4V

Collector Emitter Voltage (VCEO): 1.7kV

Insulated Gate Bipolar Transistor, 32A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN