N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1700V Collector-Emitter Breakdown Voltage and a 75A Max Collector Current. This through-hole component is housed in a TO-247-3 plastic package, offering a maximum power dissipation of 350W and operating temperatures from -55°C to 150°C. It includes a 45ns turn-on delay and a 270ns turn-off delay, with a lead-free and RoHS compliant design.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH32N170 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 3.3V |
| Height | 21.46mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 270ns |
| Turn-On Delay Time | 45ns |
| Weight | 0.229281oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH32N170 Datasheet
Download the complete datasheet for Ixys IXGH32N170 to view detailed technical specifications.
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