Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-268AA, D3PAK-3
Power Field-Effect Transistor, 20A I(D), 1000V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN
Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
Power Field-Effect Transistor, 20A I(D), 1000V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
Insulated Gate Bipolar Transistor,
