IGBT 1kV 40A 150W D3PAK-3 Surface Mount
N-CHANNEL MOSFET, 20A, 1kV, 570mR, TO-268, Surface Mount
Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
IGBT 1.2kV 40A 190W Surface Mount TO-268-3
IGBT TO-247-3 1kV 40A 150W Through Hole
Power Field-Effect Transistor, 20A I(D), 1000V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
Insulated Gate Bipolar Transistor,
