The IXGT20N100 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1kV and a maximum collector current of 40A. It is packaged in a D3PAK-3 surface mount package and is designed for operation over a temperature range of -55°C to 150°C. The device is RoHS compliant and is available in quantities of 30 per rail/Tube packaging. The IXGT20N100 is suitable for high-power applications such as motor drives and power supplies.
PackageTO-268-3
MountingSurface Mount
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Technical Specifications
Ixys IXGT20N100 technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 1kV |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 1kV |
| Collector-emitter Voltage-Max | 3V |
| Input Type | STANDARD |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Weight | 0.158733oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGT20N100 Datasheet
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