Power Field-Effect Transistor, 4A I(D), 600V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, ISOLATED TO-220, 3 PIN
600V N-Channel MOSFET, 7A ID, 1.1R Rds(on), TO-220
N-Channel Enhancement Mode Power MOSFET 600V 4A 1100R 41000mW
