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Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,

TO-264, 3 PIN

Transferred

Package/Case: TO-264-3

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 2.55V

Collector-emitter Voltage-Max: 3.2V

Insulated Gate Bipolar Transistor,

Active

IGBT 1200V 188A 1150W TO264

Volume Production

Package/Case: TO-264-3

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 2.9V

Collector-emitter Voltage-Max: 3.5V

Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel,

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 1.2kV

Collector-emitter Voltage-Max: 3.2V

Height: 21.34mm

Insulated Gate Bipolar Transistor,

Active

Insulated Gate Bipolar Transistor,

Transferred

Insulated Gate Bipolar Transistor,

Active

Insulated Gate Bipolar Transistor,

Active