The IXYS IXYK120N120C3 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a collector-emitter saturation voltage of 2.55V. It can handle a maximum collector current of 240A and a maximum power dissipation of 1.5kW. The device is packaged in a TO-264-3 package and is designed for through-hole mounting. The operating temperature range is from -55°C to 175°C, and the device is RoHS compliant.
PackageTO-264-3
MountingThrough Hole
Power1.5kW
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Technical Specifications
Ixys IXYK120N120C3 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.55V |
| Collector-emitter Voltage-Max | 3.2V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 240A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 1.5kW |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXYK120N120C3 Datasheet
Download the complete datasheet for Ixys IXYK120N120C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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