Search Results for &quot; JAN2N7236U &quot;

Trans MOSFET P-CH 100V 18A 3-Pin TO-267AB

Not Recommended for New Design

Continuous Drain Current (ID): 18A

Drain to Source Voltage (Vdss): 100V

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

JAN2N7236

Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-254

Not Recommended for New Design

Package/Case: TO-254-3

Continuous Drain Current (ID): 18A

Drain to Source Voltage (Vdss): 100V

Gate to Source Voltage (Vgs): 20V

Infineon

Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

International Rectifier

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Not Recommended for New Design

Continuous Drain Current (ID): 18A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 125°C

Min Operating Temperature: -55°C

Search Results for "JAN2N7236U"

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JAN2N7236U

Trans MOSFET P-CH 100V 18A 3-Pin TO-267AB

Not Recommended for New Design

Continuous Drain Current (ID): 18A

Drain to Source Voltage (Vdss): 100V

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

JAN2N7236

Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-254

Not Recommended for New Design

Package/Case: TO-254-3

Continuous Drain Current (ID): 18A

Drain to Source Voltage (Vdss): 100V

Gate to Source Voltage (Vgs): 20V

Infineon

Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

International Rectifier

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line