Power Field-Effect Transistor,
Power Field-Effect Transistor, 102A I(D), 300V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-21
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 334A I(D), 100V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-21
Power Field-Effect Transistor, 30A I(D), 1000V, 0.245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-21
N-Channel MOSFET, 75V, 500A, 0.0016 Ohm, 21-Pin
Insulated Gate Bipolar Transistor,
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
Insulated Gate Bipolar Transistor
SCR 150V 60A High-Speed Power Semiconductor
Insulated Gate Bipolar Transistor, 92A I(C), 1200V V(BR)CES, N-Channel,
Insulated Gate Bipolar Transistor, 105A I(C), 600V V(BR)CES, N-Channel,
Insulated Gate Bipolar Transistor, 34A I(C), 3000V V(BR)CES, N-Channel,
Allen Bradley PLC Expansion Module Memory
Inductor Spiral 75nH 1GHz 20Q-Factor 250mA
Inductor Spiral 50nH 1GHz 23Q-Factor 250mA