RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 368-03, HOGPAC-2
RF MOSFET Transistors RF MOSFET (VDMOS)
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, PLASTIC, CASE 1366A-02, 8 PIN
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272, PLASTIC, CASE 1366A-02, TO-272, 8 PIN
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
UHF BAND, Si, NPN, RF POWER TRANSISTOR
"15 W
RF Power Field-Effect Transistor
