MOSFET RF N-CH 28V 30W TO-272-16
IC,RF AMPLIFIER,SINGLE,MOS,FLANGE MT,PLASTIC
Wide Band High Power Amplifier
746 MHz - 960 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, PLASTIC, CASE 1329A-02, TO-272, 16 PIN
Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 746-960 MHz, 30 W, 26-28 V
746MHz - 960MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
746 MHz - 960 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1329A-03, WB-16, TO-272, 16 PIN
Wide Band High Power
Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-17
IGBT MODULE 1700V 335A 1400W E+
Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-35
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19
Insulated Gate Bipolar Transistor, 165A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19
IGBT MODULE 1200V 62A 280W E2
Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-33
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, SIXPACK-17
Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel, MODULE-17
