RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Zener Diode, 7.26V V(Z), 5.65%, 0.4W, Silicon, Unidirectional, DO-34, GLASS PACKAGE-2

SPDT Momentary Snap Action Switch, 1A 250VAC, Screw Term, Steel Plunger