Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
6.9pF 50VDC C0G Ceramic Chip Capacitor 0603 Surface Mount
Cap Ceramic 6.9pF 50V C0G 0.1pF Pad SMD 0603 125°C Low ESR T/R
6.5A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
