IGBT, MODULE, 1.2KV, 323A
IGBT, MODULE, 1.2KV, 333A
DIODE, POWER MODULE, 232A, 1.6KV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):232A; Forward Voltage VF Max:2.09V; No. of Pins:5Pins; Operating Temperature Max:150 C; Packaging:Each ;RoHS Compliant: Yes
IGBT, MODULE, 1.2KV, 310A; Transistor Polarity:Dual NPN; DC Collector Current:310A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:16; Packaging:Each ;RoHS Compliant: Yes
SEMIKRON SEMIX 202GB066HD IGBT Array & Module Transistor, N Channel, 270 A, 1.9 V, 45 W, 600 V, SEMiX 2
Insulated Gate Bipolar Transistor, 260A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 2, 11 PIN
IGBT MODULE, 1.2KV, 240A, SEMIX 2; Transistor Polarity:N Channel; DC Collector Current:250A; Collector Emitter Saturation Voltage Vce(on):2.15V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:16 ;RoHS Compliant: Yes
IGBT Module, Trench, Half-Bridge, 1200 V, 314 A Max., SEMiX 2s
Insulated Gate Bipolar Transistor, 270A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN
IGBT; 1200 V, 250 A @ 25 DegC; 260 A @ 80 DegC; 1.7 V @ 25 degC
Insulated Gate Bipolar Transistor, 270A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN
SEMIKRON SEMIX341D16S Bridge Rectifier Diode, Three, 1.6 V, 340 A, Module, 1.75 V, 5 Pins
RECTIFIER/THYRISTOR DIODE MODULE, 1600V, SEMIX
DIODE, STANDARD, 190A, DUAL - More Details
IGBT, MODULE, 1.2KV, 231A
IGBT, MODULE, 1.2KV, 800A
IGBT, MODULE, 1.2KV, 596A
IGBT, MODULE, 1.2KV, 673A
IGBT, MODULE, 1.2KV, 448A
