Semikron SEMiX453GB12E4s, GB Series IGBT Module, 683 A max, 1200 V, Screw Mount
Insulated Gate Bipolar Transistor, 430A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 3, 11 PIN
Insulated Gate Bipolar Transistor, 444A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 3S, 20 PIN
IGBT MODULE, 1.7KV, 460A, SEMIX 33
IGBT, MODULE, 1.2KV, 673A
Trans IGBT Module N-CH 1700V 444A 29-Pin
IGBT; 1700 V, 460 A @ 25 DegC; 450 A @ 80 DegC; 1.7 V @ 25 degC
IGBT, MODULE, 1.2KV, 683A
IGBT, MODULE, 1.2KV, 596A
Trans IGBT Module N-CH 1200V 418A 29-Pin
Insulated Gate Bipolar Transistor, 490A I(C), 600V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN
SEMIKRON SEMIX341D16S Bridge Rectifier Diode, Three, 1.6 V, 340 A, Module, 1.75 V, 5 Pins
DIODE, POWER MODULE, 232A, 1.6KV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):232A; Forward Voltage VF Max:2.09V; No. of Pins:5Pins; Operating Temperature Max:150 C; Packaging:Each ;RoHS Compliant: Yes
RECTIFIER/THYRISTOR DIODE MODULE, 1600V, SEMIX
DIODE, STANDARD, 190A, DUAL - More Details
IGBT, MODULE, 1.2KV, 323A
IGBT, MODULE, 1.2KV, 231A
IGBT, MODULE, 1.2KV, 310A; Transistor Polarity:Dual NPN; DC Collector Current:310A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:16; Packaging:Each ;RoHS Compliant: Yes
IGBT, MODULE, 1.2KV, 800A
