Search Results for "SEMIX653GD176HDC"

IGBT; 1700 V, 660 A @ 25 DegC; 650 A @ 80 DegC; 1.7 V @ 25 degC

IGBT MODULE, 1.7KV, 619A, SEMIX 33C

Insulated Gate Bipolar Transistor, 650A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 3, 11 PIN

Insulated Gate Bipolar Transistor, 619A I(C), 1700V V(BR)CES, N-Channel, SEMIX 3S, 20 PIN

IGBT, MODULE, 1.2KV, 800A

IGBT HALFBRIDGE ULTRAFAST, 1200V, SEMITRANS

Insulated Gate Bipolar Transistor, 600A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 4, 11 PIN

Insulated Gate Bipolar Transistor, 567A I(C), 1700V V(BR)CES, N-Channel, SEMIX 4C, 25 PIN

IGBT POWER MODULE; Transistor Polarity:N Channel; DC Collector Current:720A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:40W; Collector Emitter Voltage V(br)ceo:1V; No. of Pins:20; Current, Ifs max:1800A ;RoHS Compliant: Yes

Trans IGBT Module N-CH 600V 720A 14-Pin

Trans IGBT Module N-CH 600V 720A 11-Pin Case GAR

IGBT, MODULE, 1.2KV, 916A

IGBT, MODULE, 1.2KV, 916A

SEMIKRON SEMIX341D16S Bridge Rectifier Diode, Three, 1.6 V, 340 A, Module, 1.75 V, 5 Pins

DIODE, POWER MODULE, 232A, 1.6KV; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):232A; Forward Voltage VF Max:2.09V; No. of Pins:5Pins; Operating Temperature Max:150 C; Packaging:Each ;RoHS Compliant: Yes

RECTIFIER/THYRISTOR DIODE MODULE, 1600V, SEMIX

Trans IGBT Module N-CH 1700V 444A 29-Pin

IGBT; 1700 V, 460 A @ 25 DegC; 450 A @ 80 DegC; 1.7 V @ 25 degC

DIODE, STANDARD, 190A, DUAL - More Details

Trans IGBT Module N-CH 1700V 353A 29-Pin