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NPN Phototransistor 880nm 50mA 35V Through Hole Top View

Volume Production

Package/Case: Radial

Collector Emitter Breakdown Voltage: 35V

Collector Emitter Saturation Voltage: 150mV

Collector Emitter Voltage (VCEO): 35V

PHOTO TRANSISTOR DETECTOR

Active

Max Operating Temperature: 100

Min Operating Temperature: -40

Number of Functions: 1

Power Dissipation-Max: 0.2

Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4

Not Recommended for New Design

Lens Style: Domed

Max Collector Current: 50mA

Polarity: NPN

RoHS Compliant: No

Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4

Unknown

Description: Phototransistor IR Chip Silicon 880nm 2-Pin T-1 3/4