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Search Results for "SI1926DL-T1-GE3"

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SI1926DL-T1-GE3

Vishay(Siliconix)

MOSFET 2N-CH 60V 0.37A SOT363

Volume Production

Continuous Drain Current (ID): 370mA

Drain to Source Voltage (Vdss): 60V

Fall Time: 14ns

FET Type: 2 N-Channel

SI1902DL-T1-GE3

Vishay(Siliconix)

MOSFET 2N-CH 20V 0.66A SC-70-6

Volume Production

Package/Case: SOT-363-6

Continuous Drain Current (ID): 660mA

Drain to Source Resistance: 385mR

Drain to Source Voltage (Vdss): 20V

SI1900DL-T1-GE3

Vishay(Siliconix)

MOSFET Dual 30V N-CH TRENCH

Unknown

RoHS Compliant: Yes

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