IGBT MODULE, SIX, 1.2KV, 62A; Transistor Polarity:Six NPN; DC Collector Current:62A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 115A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 3, 68 PIN
Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 3, 68 PIN
IGBT, MODULE, 1.2KV, 81A, MINISKIIP-3; Transistor Polarity:-; DC Collector Current:81A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes
IGBT MODULE, SIX, 1.2KV, 47A; Transistor Polarity:Six NPN; DC Collector Current:47A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes
