Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, STA, SIP-8
Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, TO-209AE, HERMETIC SEALED, METAL, TO-118, 3 PIN