Search Results for "TH58BYG2S3HBAI6"
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TH58BYG2S3HBAI6
Toshiba
EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM
Datasheet
Volume Production
Package/Case:
VFBGA
Interface:
Parallel
Max Operating Temperature:
85°C
Memory Type:
EEPROM, NAND
TH58BYG2S3HBAI4
Toshiba
Flash Memory 4Gb 1.8V IC Flash NAND & BENAND EEPROM
Datasheet
Volume Production
Package/Case:
BGA
Density:
4Gb
Max Operating Temperature:
85°C
Min Operating Temperature:
-40°C
