Search Results for "TK31J60W,S1VQ"
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TK31J60W,S1VQ
Toshiba
N-CHANNEL Power MOSFET 600V 30.8A 230W Through Hole
Datasheet
Volume Production
Capacitance:
3E-09F
Continuous Drain Current (ID):
30.8A
Drain to Source Breakdown Voltage:
600V
Drain to Source Resistance:
88mR
TK31J60W,S1VQ(O
Toshiba
Trans Mosfet N-ch 600V 30.8 A 3-PIN TO-3P(N)
Datasheet
Not Recommended for New Design
Continuous Drain Current (ID):
30.8A
Fall Time:
8.5ns
Gate to Source Voltage (Vgs):
30V
Max Operating Temperature:
150°C
