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TK65A10N1,S4X(S

Toshiba TK65A10N1,S4X(S N-channel MOSFET Transistor, 65 A, 100 V, 3-Pin TO-220SIS

Volume Production

Continuous Drain Current (ID): 65A

Gate to Source Voltage (Vgs): 20V

Height: 15mm

Input Capacitance: 5.4nF

MOSFET N-CH 100V 65A TO-220

Volume Production

Package/Case: TO-220-3

Continuous Drain Current (ID): 65A

Drain to Source Resistance: 4mR

Drain to Source Voltage (Vdss): 100V