The EM6HE16EWAKG-10IH is a 4Gbit high-speed CMOS Double Data Rate 3 Low Voltage (DDR3L) Synchronous DRAM. It is organized as 256MB x 16 bits and operates at a clock frequency of up to 933 MHz. It utilizes an 8n-prefetch architecture to achieve high-speed operation and is designed to operate at 1.35V with backward compatibility to 1.5V. The device is industrial grade, supporting an extended temperature range.
Etron Technology EM6HE16EWAKG-10IH technical specifications.
| Memory Density | 4Gbit |
| Memory Organization | 256M x 16 |
| Clock Frequency | 933MHz |
| Supply Voltage | 1.35V |
| Operating Temperature Min | -40°C |
| Operating Temperature Max | 95°C |
| Access Time | 20ns |
| Pin Count | 96 |
| Memory Type | Volatile DDR3L SDRAM |
| RoHS | Compliant |
| Reach Svhc | Yes |
Download the complete datasheet for Etron Technology EM6HE16EWAKG-10IH to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.