N-channel enhancement mode power MOSFET in a TO-252 DPAK package, featuring a 25V drain-source voltage and 15A continuous drain current. This surface-mount device offers a low drain-source on-resistance of 65mOhm at 10V gate-source voltage. It supports a maximum gate-source voltage of ±12V and has a maximum power dissipation of 50,000mW. The DPAK package, with a lead-frame SMT construction and gull-wing leads, measures 6.6mm x 6.2mm x 2.35mm. Operating temperature range is -55°C to 175°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Etronic Team SSD3055LA technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6(Max)
Package Width (mm)
6.2(Max)
Package Height (mm)
2.35(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
15A
Maximum Drain Source Resistance
65@10VmOhm
Typical Gate Charge @ Vgs
6@10V|[email protected]nC
Typical Gate Charge @ 10V
6nC
Typical Input Capacitance @ Vds
238@8VpF
Maximum Power Dissipation
50000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Etronic Team SSD3055LA Datasheet
Download the complete datasheet for Etronic Team SSD3055LA to view detailed technical specifications.
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