N-channel small-signal MOSFET supports a 100 V minimum drain-source breakdown voltage and 170 mA maximum continuous drain current. The device uses a standard gate-level, single-transistor configuration in a SOT-23 package. On-resistance is specified at 6000 mΩ maximum with 10 V gate drive, and gate-source voltage is rated to 20 V maximum. Reel packaging with 3000 units is listed for production handling.
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| Channel Polarity | N-Channel |
| Silicon Family | PowerTrench® T1 |
| Package Name | SOT-23 |
| Type | Small Signal |
| Gate Level | Standard |
| Configuration | Single |
| Drain-Source Breakdown Voltage Min | 100V |
| Drain-Source On-Resistance Max at VGS=10 V | 6000mΩ |
| Gate-Source Voltage Max | 20V |
| Gate Threshold Voltage Max | 2.8V |
| Continuous Drain Current Max | 0.17A |
| Power Dissipation Max | 0.225W |
| Input Capacitance Typ | 20pF |
| Output Capacitance Typ | 9pF |
| Reverse Transfer Capacitance Typ | 4pF |
| Case Outline | 318 |
| Moisture Sensitivity Level | 1 |
| MSL Peak Temperature | 260°C |
| Container Type | REEL |
| Container Quantity | 3000 |
| Lead-free | Pb-free |
| Halogen-free | Halide free |
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