N-channel PowerTrench MOSFET provides a 100 V drain-to-source rating and 80 A continuous drain current in a TO-263AB surface-mount package. The device has 7.5 mΩ typical on-resistance at 10 V gate drive and 84 nC typical total gate charge. It operates over a -55 °C to 175 °C junction temperature range and is rated for 393 mJ single-pulse avalanche energy. The MOSFET is RoHS compliant and qualified to AEC-Q101.
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| Transistor Type | N-Channel MOSFET |
| Technology | PowerTrench |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 80 at TC < 111°C, VGS = 10 VA |
| Continuous Drain Current, Ambient | 12 at TA = 25°C, RθJA = 43°C/WA |
| Gate-Source Voltage | ±20V |
| Drain-Source On Resistance | 7.5 typ, 9 max at VGS = 10 V, ID = 80 AmΩ |
| Drain-Source On Resistance at 6 V Gate Drive | 9 typ, 15 max at VGS = 6 V, ID = 40 AmΩ |
| Gate Threshold Voltage | 2 min, 4 max at ID = 250 µAV |
| Total Gate Charge | 84 typ, 110 max at VGS = 10 VnC |
| Input Capacitance | 6000 typpF |
| Output Capacitance | 820 typpF |
| Reverse Transfer Capacitance | 200 typpF |
| Power Dissipation | 310W |
| Single Pulse Avalanche Energy | 393mJ |
| Operating and Storage Temperature | -55 to 175°C |
| Thermal Resistance Junction to Case | 0.48°C/W |
| Body Diode Forward Voltage | 1.25 max at ISD = 80 AV |
| Reverse Recovery Time | 64 maxns |
| Package | TO-263AB |
| RoHS | Compliant |
| Aec-q101 | Qualified |
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