N-channel logic-level PowerTrench MOSFET is designed for DC/DC converter switching using synchronous or conventional PWM controllers. The device is rated for 30 V drain-source voltage and 80 A continuous drain current with 187 W total power dissipation at 25 °C case temperature. Static on-resistance is specified as 3.5 mΩ maximum at 10 V gate drive and 4.5 mΩ maximum at 4.5 V gate drive. It uses a TO-263AB surface-mount package and supports an operating and storage junction temperature range from -65 °C to 175 °C.
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| Transistor Type | N-channel MOSFET |
| Technology | PowerTrench |
| Drain-Source Voltage | 30V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 80A |
| Pulsed Drain Current | 300A |
| Total Power Dissipation | 187W |
| Power Derating Above 25°C | 1.25W/°C |
| Operating Junction Temperature Range | -65 to 175°C |
| Storage Temperature Range | -65 to 175°C |
| Maximum Lead Temperature | 275 for 5 s at 1/8 in from case°C |
| Thermal Resistance Junction-to-Case | 0.8°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| Drain-Source Breakdown Voltage | 30 minV |
| Static Drain-Source On-Resistance at VGS=10V | 3.5 maxmΩ |
| Static Drain-Source On-Resistance at VGS=4.5V | 4.5 maxmΩ |
| Gate Threshold Voltage | 1 min, 1.5 typ, 2 maxV |
| Input Capacitance | 10500 typpF |
| Total Gate Charge | 120 typ, 170 maxnC |
| Forward Transconductance | 170 typS |
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