Asymmetric dual N-channel MOSFET power stage integrates a control MOSFET and a synchronous SyncFET for synchronous buck converter power stages. The device is rated for 25 V drain-to-source operation with ±12 V gate-to-source limits and a -55 °C to 150 °C junction temperature range. Q1 provides 4.7 mΩ maximum on-resistance at 10 V gate drive, while Q2 provides 1.0 mΩ maximum on-resistance at 10 V gate drive. The Power 56 package uses an internally connected switch node to simplify placement and routing and reduce circuit inductance. The part is RoHS compliant and supplied in 3000-unit 13-inch tape-and-reel packaging.
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| MOSFET configuration | Asymmetric dual N-channel |
| Drain-source voltage, Q1 | 25V |
| Drain-source voltage, Q2 | 25V |
| Gate-source voltage | ±12V |
| Continuous drain current at case 25 °C, Q1 package limited | 30A |
| Continuous drain current at case 25 °C, Q2 package limited | 49A |
| Continuous drain current at ambient 25 °C, Q1 | 17.5A |
| Continuous drain current at ambient 25 °C, Q2 | 38A |
| Pulsed drain current, Q1 | 70A |
| Pulsed drain current, Q2 | 150A |
| On-resistance at 10 V gate drive, Q1 maximum | 4.7mΩ |
| On-resistance at 4.5 V gate drive, Q1 maximum | 5.5mΩ |
| On-resistance at 10 V gate drive, Q2 maximum | 1.0mΩ |
| On-resistance at 4.5 V gate drive, Q2 maximum | 1.2mΩ |
| Total gate charge at 10 V, Q1 typical | 26nC |
| Total gate charge at 10 V, Q2 typical | 106nC |
| Operating junction temperature range | -55 to 150°C |
| Thermal resistance junction-to-case, Q1 | 3.0°C/W |
| Thermal resistance junction-to-case, Q2 | 1.7°C/W |
| Package outline standard | JEDEC MO-240 variation AA |
| RoHS | Compliant |
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