This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 150 A continuous drain current at 25 °C. It specifies a maximum on-resistance of 4.5 mΩ at 10 V gate drive, 220 W power dissipation, and 1400 mJ single-pulse avalanche energy. The device uses a TO-263 package and operates across a -55 °C to 175 °C junction and storage temperature range. Dynamic characteristics include 163 nC total gate charge, 6500 pF input capacitance, and reverse recovery time up to 60 ns.
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FNK Semiconductor FNK60N15D technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 150A |
| Continuous Drain Current at 100C | 105A |
| Pulsed Drain Current | 600A |
| Power Dissipation | 220W |
| Single Pulse Avalanche Energy | 1400mJ |
| Operating Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.68°C/W |
| Drain-Source Breakdown Voltage | 60 minV |
| Gate Threshold Voltage | 2 to 4V |
| Drain-Source On-Resistance | 3.6 typ, 4.5 maxmΩ |
| Forward Transconductance | 180S |
| Input Capacitance | 6500pF |
| Output Capacitance | 650pF |
| Reverse Transfer Capacitance | 590pF |
| Total Gate Charge | 163nC |
| Reverse Recovery Time | 42 typ, 60 maxns |
| Package Type | TO-263 |
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