Fuji Electric
2MBI200U4H-120-50
FUJI ELECTRIC 2MBI200U4H-120-50 IGBT Array & Module Transistor, N Channel, 200 A, 2.05 V, 1.04 kW, 1.2 kV, Module
PackageModule
MountingPanel
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Technical Specifications
Fuji Electric 2MBI200U4H-120-50 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.05V |
| Collector Emitter Voltage (VCEO) | 2.05V |
| Height | 30mm |
| Length | 108mm |
| Max Collector Current | 200A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.04kW |
| Mount | Panel |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Width | 62mm |
Compliance
| RoHS | Compliant |
Datasheet
Fuji Electric 2MBI200U4H-120-50 Datasheet
Download the complete datasheet for Fuji Electric 2MBI200U4H-120-50 to view detailed technical specifications.
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