This automotive N-channel enhancement-mode trench power MOSFET is rated for 60 V drain-source voltage and ±80 A continuous drain current. It is housed in a T-pack package and has a maximum drain-source on-state resistance of 6.5 mΩ at VGS = 10 V and ID = 40 A. The device supports ±320 A pulsed drain current, 195 W maximum power dissipation, and channel operating temperature up to 150 °C. Typical dynamic characteristics include 95 nC total gate charge, 4500 pF input capacitance, and 35 ns turn-on delay. The reverse diode is specified at 0.95 V typical forward voltage at 80 A and 150 ns typical reverse recovery time at 40 A.
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Fuji Electric 2SK4047-01S technical specifications.
| Channel Type | N-Channel enhancement mode |
| Drain-Source Voltage | 60V |
| Drain-Source Voltage (VGS=-20V) | 30V |
| Continuous Drain Current | ±80A |
| Pulsed Drain Current | ±320A |
| Gate-Source Voltage | +30/-20V |
| Avalanche Current | 80A |
| Avalanche Energy | 274.5mJ |
| Power Dissipation | 195W |
| Operating Channel Temperature | 150°C |
| Storage Temperature Range | -55 to +150°C |
| Gate Threshold Voltage | 2.5 to 3.5V |
| Drain-Source On-State Resistance | 6.5 maxmΩ |
| Forward Transconductance | 25 minS |
| Input Capacitance | 4500 typpF |
| Output Capacitance | 950 typpF |
| Reverse Transfer Capacitance | 450 typpF |
| Turn-On Delay Time | 35 typns |
| Rise Time | 45 typns |
| Turn-Off Delay Time | 80 typns |
| Fall Time | 55 typns |
| Total Gate Charge | 95 typnC |
| Diode Forward Voltage | 0.95 typV |
| Reverse Recovery Time | 150 typns |
| Thermal Resistance Channel-to-Case | 0.641 max°C/W |
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