Fuji Electric
7MBR50SB-120-50
FUJI ELECTRIC 7MBR50SB-120-50 IGBT Array & Module Transistor, SEMITRANS, N Channel, 75 A, 2.7 V, 360 W, 1.2 kV, Module
PackageModule
Power360W
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Technical Specifications
Fuji Electric 7MBR50SB-120-50 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Isolation Voltage | 2.5kV |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 360W |
| Power Dissipation | 360W |
| Reach SVHC Compliant | Unknown |
Compliance
| RoHS | Compliant |
Datasheet
Fuji Electric 7MBR50SB-120-50 Datasheet
Download the complete datasheet for Fuji Electric 7MBR50SB-120-50 to view detailed technical specifications.
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