The FGW40N120VD is a power transistor from Fuji Electric with a maximum collector current of 40A and collector-emitter breakdown voltage of 1.2kV. It is packaged in a TO-247 case and is designed for through-hole mounting. The device can operate at temperatures between -40°C and 175°C, with a maximum power dissipation of 340W. The transistor's collector-emitter saturation voltage is 1.85V.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Fuji Electric FGW40N120VD technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Height | 20.95mm |
| Length | 15.9mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 340W |
| Mount | Through Hole |
| Reach SVHC Compliant | Unknown |
| Width | 5.03mm |
Compliance
| RoHS | Compliant |
Datasheet
Fuji Electric FGW40N120VD Datasheet
Download the complete datasheet for Fuji Electric FGW40N120VD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.