N-channel enhancement-mode power MOSFET is rated for 600 V drain-source voltage and 28.7 A continuous drain current at 25 °C case temperature. The device provides 0.146 Ω maximum drain-source on-resistance at 10 V gate drive and 5.7 A drain current. It uses a DFN8x8 package with separate gate-drive sub-source connection and supports switching applications. The MOSFET has ±30 V gate-source voltage rating, 159 W maximum power dissipation at 25 °C case temperature, and -55 °C to 150 °C storage temperature range. Lead terminals are Pb-free, and the package is RoHS compliant with halogen-free molding compound and MSL 1 moisture sensitivity.
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| Transistor Type | N-channel enhancement-mode power MOSFET |
| Drain-Source Voltage | 600V |
| Continuous Drain Current at Tc=25°C | 28.7A |
| Continuous Drain Current at Tc=100°C | 18.2A |
| Pulsed Drain Current | 83.6A |
| Gate-Source Voltage | ±30V |
| Maximum Power Dissipation at Tc=25°C | 159W |
| Operating Channel Temperature | 150 max°C |
| Storage Temperature | -55 to +150°C |
| Drain-Source Breakdown Voltage | 600 minV |
| Gate Threshold Voltage | 3.5 min, 4.0 typ, 4.5 maxV |
| Drain-Source On-State Resistance | 0.130 typ, 0.146 maxΩ |
| Gate Resistance | 3.0 typΩ |
| Forward Transconductance | 3.7 min, 15 typS |
| Input Capacitance | 1240 typpF |
| Output Capacitance | 42 typpF |
| Reverse Transfer Capacitance | 6.3 typpF |
| Total Gate Charge | 53 typnC |
| Diode Forward On-Voltage | 1.00 typ, 1.35 maxV |
| Thermal Resistance Channel-to-Case | 0.786 max°C/W |
| Moisture Sensitivity Level | MSL 1 |
| RoHS | Compliant |
| Lead Free | Pb-free lead terminal |
| Halogen Free | Halogen-free molding compound |
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