N-channel enhancement-mode power MOSFET rated for 600 V drain-source voltage and 23.9 A continuous drain current at 25 °C case temperature. The device has a maximum drain-source on-state resistance of 0.160 Ω at 10 V gate drive and 9.0 A drain current. It uses a TO-220AB through-hole package with gate, drain, and source pin connections. The MOSFET supports switching applications and includes a body diode with 23.9 A continuous forward current capability. Lead terminals are Pb-free, the molding compound is halogen-free, and the device is RoHS compliant.
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| Transistor Type | N-Channel enhancement mode power MOSFET |
| Drain-Source Voltage | 600V |
| Continuous Drain Current at 25°C Case | 23.9A |
| Continuous Drain Current at 100°C Case | 15.1A |
| Pulsed Drain Current | 71.6A |
| Gate-Source Voltage | ±30V |
| Drain-Source On-State Resistance | 0.160 maxΩ |
| Gate Threshold Voltage | 3.5 to 4.5V |
| Forward Transconductance | 5.7 min, 11.5 typS |
| Input Capacitance | 990 typpF |
| Output Capacitance | 35 typpF |
| Reverse Transfer Capacitance | 5.3 typpF |
| Total Gate Charge | 43 typnC |
| Maximum Power Dissipation at 25°C Case | 127W |
| Operating Channel Temperature | 150 max°C |
| Storage Temperature Range | -55 to +150°C |
| Thermal Resistance, Channel to Case | 0.984 max°C/W |
| Package | TO-220AB |
| RoHS | Compliant |
| Lead Free | Pb-free lead terminal |
| Halogen Free | Uses halogen-free molding compound |
