N-channel enhancement-mode power MOSFET supports a 600 V drain-source rating and 23.9 A continuous drain current at 25 °C case temperature. The insulated TO-220F(SLS) package provides 2 kVrms isolation and a maximum channel-to-case thermal resistance of 2.778 °C/W. The device has a typical 0.146 ohm drain-source on-resistance at 10 V gate drive and 9.0 A drain current. Lead terminals are Pb-free, and the molded compound is halogen-free with RoHS compliance.
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| MOSFET channel type | N-channel enhancement mode |
| Drain-source voltage | 600V |
| Continuous drain current at Tc 25°C | 23.9A |
| Continuous drain current at Tc 100°C | 15.1A |
| Pulsed drain current | 71.6A |
| Gate-source voltage | ±30V |
| Maximum avalanche current | 2.7A |
| Maximum avalanche energy | 618mJ |
| Maximum power dissipation at Tc 25°C | 45W |
| Operating channel temperature | 150°C |
| Storage temperature range | -55 to +150°C |
| Isolation voltage | 2kVrms |
| Drain-source breakdown voltage | 600 minV |
| Gate threshold voltage | 3.5 to 4.5V |
| Drain-source on-state resistance | 0.146 typ, 0.160 maxΩ |
| Input capacitance | 990 typpF |
| Total gate charge | 43 typnC |
| Diode forward on-voltage | 0.90 typ, 1.35 maxV |
| Reverse recovery time | 285 typns |
| Thermal resistance channel-to-case | 2.778 max°C/W |
| RoHS | Compliant |
| Pb-free | Lead terminals Pb-free |
| Halogen-free | Halogen-free molding compound |
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